MT41K256M16TW-093 vs K4B4G1646Q Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16TW-093 sa pamamagitan ng Micron Technology at K4B4G1646Q sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MT41K256M16TW-093 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT41K256M16TW-093 | K4B4G1646Q |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $15.50 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4Gbit (256M x 16) | — |
| Width ng Data Bus | 16 bit | 16 bits |
| Clock Frequency | 1.066 GHz | — |
| Rate ng Data | 2133 MT/s | 1866 Mbps (PC3-14900) |
| Access Time | 20 ns | — |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | 1.35V |
| Uri ng Interface | Parallel | — |
| Packhaging | 96-FBGA (8x14 mm) | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (TC) | — |
| Tindminan RoHS | Compliant | — |
| REACH Status | Compliant | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Density | — | 4Gb |
| Organisasyon | — | 256M x 16 |
| Die | — | Q-die |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| Latensya ng CAS | — | Programmable |
| Temperature na Operasyon | — | [DATA_NEEDED: Operating temperature range] |