MT41K256M16TW-093 vs K4B4G1646Q Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16TW-093 disebabkan oleh Micron Technology dan K4B4G1646Q disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT41K256M16TW-093 | K4B4G1646Q |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $15.50 | — |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4Gbit (256M x 16) | — |
| Lebar Bus Data | 16 bit | 16 bits |
| Clock Frequency | 1.066 GHz | — |
| Kadar Data | 2133 MT/s | 1866 Mbps (PC3-14900) |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | 1.35V |
| Jenis Antaramuka | Parallel | — |
| Kemasan | 96-FBGA (8x14 mm) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Gambaran Suhu Operasi | 0°C to +95°C (TC) | — |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Density | — | 4Gb |
| Organisasi | — | 256M x 16 |
| Die | — | Q-die |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| Latensi CAS | — | Programmable |
| Suhu Operasi | — | [DATA_NEEDED: Operating temperature range] |